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    Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan, Republic of China
    APPLIED PHYSICS LETTERS VOLUME 81, NUMBER 4 22 JULY 2002 (location: process/carbon nanot/)
    
    
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12. Boudou, JP; MartinezAlonzo, A; Tascon, JMD, Introduction of acidic groups at the surface of activated carbon by microwave-induced oxygen plasma at low pressure, Carbon, 2000, vol. 38, issue 7, pp. 1021.
13. Hsu, KC; Koretsky, MD, Surface Kinetics of Polyphenylene Oxide Etching in a CF4/O2/Ar Downstream Microwave Plasma, Journal- Electrochemical Society, 2000, vol. 147, issue 5, pp. 1818.
14. Takahashi, N; Koukitu, A; Seki, H, Growth and characterization of YBa2Cu3Ox and NdBa2Cu3Ox superconducting thin films by mist microwave-plasma chemical vapor deposition using a CeO2 buffer layer, Journal of Materials Science, 2000, vol. 35, issue 5, pp. 1231.
15. Badzian, T; Badzian, A; Cheng, SC, Anisotropic growth of single-crystal graphite plates by nickel-assisted microwave-plasma chemical-vapor deposition, Applied Physics Letters, 2000, vol. 76, issue 9, pp. 1125.
16. Anton, R; Wiegner, T; Bradley, C, Design and performance of a versatile, cost-effective microwave electron cyclotron resonance plasma source for surface and thin film processing, Review of Scientific Instruments, 2000, vol. 71, issue 2p2, pp. 1177.
17. Korzec, D; Muller, A; Engemann, J, Microwave plasma source for high current ion beam neutralization, Review of Scientific Instruments, 2000, vol. 71, issue 2p2, pp. 800.
18. Lennon, P; Espuche, E; Valot, E, Comparison of the wetting behaviour of polyiamides presented as particles and films - influence of a plasma microwave treatment, Journal of Materials Science, 2000, vol. 35, issue 1, pp. 49.
19. Jauberteau, I; Cinelli, MJ; Aubreton, J, Expanding microwave plasma for steel carburizing: Role of the plasma impinging species on the steel surface reactivity, Journal of Vacuum Science and Technology A Vacuums Surfaces and Films, 2000, vol. 18, issue 1, pp. 108.
20. Forker, M; Schmidberger, J; Vollath, D, Perturbed-angular-correlation study of phase transformations in nanoscaled Al2O3-coated and noncoated ZrO2 particles synthesized in a microwave plasma, Physical Review, 2000, vol. 61, issue 2, pp. 1014.
21. Ntsama Etoundi, MC; Desmaison, J; Tixier, C, Remote microwave plasma enhanced chemical vapour deposition of alumina on metallic substrates, Surface & Coatings Technology, 1999, vol. 120/121, issue , pp. 233.
22. Komatsu, Y; Sato, T; Akashi, K, Preparation of YBCO/ZrO2 thin films on Si by MOCVD using a mode converting type of microwave plasma apparatus, Thin Solid Films, 1999, vol. 341, issue 1/2, pp. 132.
23. Hadrich, S; Pfelzer, B; Uhlenbusch, J, Coherent Anti-Stokes Raman Scattering Applied to Hydrocarbons in a Microwave Excited Process Plasma, Plasma Chemistry and Plasma Processing, 1999, vol. 19, issue 1, pp. 91.
24. Shirai, H; Sakuma, Y; Ueyama, H, The control of the high-density microwave plasma for large-area electronics, Thin Solid Films, 1999, vol. 337, issue 1/2, pp. 12.
25. Liu, B; Gu, H; Chen, Q, Preparation of nanosized Mo powder by microwave plasma chemical vapor deposition method, Materials Chemistry and Physics, 1999, vol. 59, issue 3, pp. 204.
26. Carney, C; Durham, D, Optimization of hardness by the control of microwave power in TiN thin film deposited by electron cyclotron resonance assisted sputtering in a nitrogen plasma, Journal of Vacuum Science & Technology. A, 1999, vol. 17, issue 5, pp. 2535.
27. Ranau, R; Oehlenschlager, J; Steinhart, H, Determination of aluminium in the edible part of fish by GFAAS after sample pretreatment with microwave activated oxygen plasma, Fresenius' Journal of Analytical Chemistry, 1999, vol. 364, issue 6, pp. 599.
28. Camps, E; Muhl, S; Romero, S, Microwave plasma nitriding of pure iron, Journal of Vacuum Science & Technology. A, 1999, vol. 17, issue 4p2, pp. 2007.
29. Vandamme, NS; Que, L; Topoleski, LDT, Carbide surface coating of Co-Cr-Mo implant alloys by a microwave plasma-assisted reaction, Journal of Materials Science, 1999, vol. 34, issue 14, pp. 3525.
    
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1. 1. Sakuma, Y; Liu, H; Shirai, H; Moriya, Y; Ueyama, H, Low temperature formation of microcrystalline silicon films using high-density SiH4 microwave plasma, Thin Solid Films, 2001, vol. 386, issue ER2, pp. 261-266.
2. Shirai, H; Sakuma, Y; Yoshino, K; Ueyama, H, Spatial distribution of high-density microwave plasma for fast deposition of microcrystalline silicon film, Solar Energy Materials and Solar Cells, 2001, vol. 66, issue ER1-4, pp. 137-145.
3. Shirai, H; Sakuma, Y; Yoshino, K; Ueyama, H, Spatial Distribution of the High-Density Microwave Plasma and Its Effect on Crystal Silicon Film Growth, Japanese Journal of Applied Physics Part 2 Letters, 2000, vol. 39, issue 8A, pp. L 782-785.
4. Sakuma, Y; Haiping, L; Shirai, H, High-density microwave plasma for high-rate and low-temperature deposition of silicon thin film, Vacuum, 2000, vol. 59, issue 1, pp. 266.
5. Ryoo, K; Shindo, W; Hirayama, M; Ohmi, T, Analysis of Epitaxy of Polysilicon Films on Silicon (100) Wafers Deposited with Enlarged Microwave Plasma, Journal- Electrochemical Society, 2000, vol. 147, issue 10, pp. 3859-3863.
6. Luterova, K; Fojtik, P; Pelant, I, Light emitting wide band gap a-Si:H deposited by microwave electron cyclotron resonance plasma-enhanced chemical vapour deposition, Journal of Noncrystalline Solids, 2000, vol. 266/269, issue , pp. 583.
7. Shirai, H; Sakuma, Y; Liu, H; Moriya, Y; Ueyama, H, Fast Deposition of Microcrystalline Silicon Using High-density SiH4 Microwave Plasma, Proceedings of Symposium on Dry Process, 1999, vol. 21ST, issue , pp. 259-264.
8. Shirai, H; Sakuma, Y; Ueyama, H, Fast Deposition of Microcrystalline Silicon Using High-Density SiH4 Microwave Plasma, Japanese journal of applied physics, part 1, r, 1999, vol. 38, issue 12A, pp. 6629.
9. Liu, YC; Furukawa, K; Tsuzuki, H, Compositional and Structural Studies of Amorphous Silicon-nitrogen Alloys Deposited at Room Temperature using a Sputtering-type Electron Cyclotron Resonance Microwave Plasma, Philosophical magazine. B, Physics of condensed matter, structural, electronic, optical, and magnetic properties, 1999, vol. 79, issue 1, pp. 137.
10. Yokota, K; Kitagawa, T; Miyashita, F, Luminescence from hydrogenated amorphous silicon treated in microwave hydrogen plasma, KOH solution, and oxygen atmosphere, Thin solid films, 1999, vol. 343/344, issue 1, pp. 191.
11. Shirai, H; Sakuma, Y; Ueyama, H, The high-density microwave plasma for high rate deposition of microcrystalline silicon, Thin solid films, 1999, vol. 345, issue 1, pp. 7.
12. Muller, P; Holber, WM; Fuhs, W, Low-Temperature Deposition of Microcrystalline Silicon by Microwave Plasma-Enhanced Sputtering, Solid state phenomena, 1999, vol. 67/68, issue , pp. 119.
13. Shindo, W; Sakai, S; Ohmi, T, Low-temperature large-grain poly-Si direct deposition by microwave plasma enhanced chemical vapor deposition using SiH4/Xe, Journal of vacuum science & technology. a, vac, 1999, vol. 17, issue 5, pp. 3134.
14. Dian, J; Valenta, J; Pelant, I, Visible photoluminescence in hydrogenated amorphous silicon grown in microwave plasma from SiH strongly diluted with He, Journal of applied physics, 1999, vol. 86, issue 3, pp. 1415.
    
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Solar Energy Materials and Solar Cells, 1 August 1996, vol. 40, no. 4, pp. 297-345(49)

Sinke W.C.[1]; Leguijt C.; Lolgen P.; Eikelboom J.A.; Weeber A.W.; Schuurmans F.M.; Alkemade P.F.A.; Sarro P.M.; Maree C.H.M.; Verhoef L.A.

[1]Netherlands Energy Research Foundation ECN, PO Box 1, 1755 ZG Petten, Netherlands

Abstract:
Surface passivation at low processing temperatures becomes an important topic for cheap solar cell processing. In this study, we first give a broad overview of the state of the art in this field. Subsequently, the results of a series of mutually related experiments are given about surface passivation with direct Plasma Enhanced Chemical Vapour Deposition (PECVD) of silicon oxide (Si-oxide) and silicon nitride (Si-nitride). Results of harmonically modulated microwave reflection experiments are combined with Capacitance-Voltage measurements on Metal-Insulator-Silicon structures (CV-MIS), accelerated degradation tests and with Secondary Ion Mass Spectrometry (SIMS) and Elastic Recoil Detection (ERD) measurements of hydrogen and deuterium concentrations in the passivating layers. A large positive fixed charge density at the interface is very important for the achieved low surface recombination velocities S. The density of interface states Dit is strongly reduced by post deposition anneals. The lowest values of S are obtained with PECVD of Si-nitride. The surface passivation obtained with Si-nitride is stable under typical operating conditions for solar cells. By using deuterium as a tracer it is shown that hydrogen in the ambient of the post deposition anneal does not play a role in the passivation by Si-nitride. Finally, the results of CV-MIS measurements (Capacitance-Voltage measurements on Metal-Insulator-Silicon structures) on deposited Si-nitride layers are used to calculate effective recombination velocities as a function of the injection level at the surface, using a model that is able to predict the surface recombination velocity S at thermally oxidized silicon surfaces. These results are not in agreement with the measured increase of S at low injection levels.

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1. Sekine, K; Saito, Y; Ohmi, T, Highly Robust Ultrathin Silicon Nitride Films Grown at Low-Temperature by Microwave-Excitation High-Density Plasma for Giga Scale Integration, IEEE Transactions on Electron Devices, 2000, vol. 47, issue 7, pp. 1370.
2. Pool, FS, Nitrogen plasma instabilities and the growth of silicon nitride by electron cyclotron resonance microwave plasma chemical vapor deposition, Journal of applied physics, 1997, vol. 81, issue 6, pp. 2839.
3. Volz, K; Ensinger, W; Stritzker, B, Formation of silicon carbide and nitride by ECR microwave plasma immersion ion implantation, Nuclear instruments & methods in physics research, 1998, vol. 141, issue 1/4, pp. 663.
4. Ensinger, W; Volz, K; Rauschenbach, B, Formation of silicon nitride layers by nitrogen ion irradiation of silicon biased to a high voltage in an electron cyclotron resonance microwave plasma, Applied physics letters, 1998, vol. 72, issue 10, pp. 1164.
5. Ye, C; Ning, Z; Gan, Z, Dielectric properties of silicon nitride films deposited by microwave electron cyclotron resonance plasma chemical vapor deposition at low temperature, Applied physics letters, 1997, vol. 71, issue 3, pp. 336.
6. Liu, YC; Furukawa, K; Muraoka, K, In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma, Applied surface science, 1997, vol. 121/122, issue , pp. 233.
7. Monteiro, OR; Wang, Z; Brown, IG, Chemical vapour deposition of silicon nitride in a microwave plasma assisted reactor, Journal of materials science, 1996, vol. 31, issue 22, pp. 6029.
8. Morita, Y; Kato, I; Nakajima, T, Fabrication of SiN Films at Low Temperature by RF Biased Coaxial-Line Microwave Plasma CVD, Electronics & communications in Japan. Part 2, Electronics, 1996, vol. 79, issue 11, pp. 58.
   
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1. Benissad, N; Aumaille, K; Granier, A; Goullet, A, Structure and properties of silicon oxide films deposited in a dual microwave-rf plasma reactor, Thin Solid Films, 2001, vol. 384, issue ER2, pp. 230-235.
2. Jia, Y; Liang, Y; Shen, D, In situ Fourier transform P-polarized infrared reflection absorption spectroscopic investigation of an interface properties of SiO2/Si(100) deposited using electron cyclotron resonance microwave plasma at room temperature, Thin Solid Films, 2000, vol. 370, issue 1/2, pp. 199.
3. Furukawa, K; Gao, D; Muraoka, K, Verification of preoxidation effect on deposition of thin gate-quality silicon oxide films at low temperature by a sputtering-type ECR microwave plasma, Materials Science and Engineering, 2000, vol. 72, issue 2/3, pp. 128.
4. Benissad, N; BoisseLaporte, C; Goullet, A, Silicon dioxide deposition in a microwave plasma reactor, Surface & coatings technology, Surface & Coatings Technology, 1999, vol. 116/119, issue , pp. 868.
5. Brockhaus, A; Behle, S; Engemann, J, Diagnostics of a Chemically Active, Pulsed Microwave Plasma for Deposition of Quartz-like Films, Contributions to Plasma Physics, 1999, vol. 39, issue 5, pp. 399.
6. Liu, YC; Ho, LT; Muroaka, K, Growth of ultrathin SiO2 on Si by surface irradiation with an O2+Ar electron cyclotron resonance microwave plasma at low temperatures, Journal of Applied Physics, 1999, vol. 85, issue 3, pp. 1911.
   
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1. Chatterjee, S; Samanta, SK; Banerjee, HD; Maiti, CK, Deposition of high-k ZrO2 films on strained SiGe layers using microwave plasma, Electronics Letters- IEE, 2001, vol. 37, issue 6, pp. 390-391.
2. Bertrand, G; Mevrel, R, Zirconia coatings realized by microwave plasma-enhanced chemical vapor deposition, Thin solid films, 1997, vol. 292, issue 1/2, pp. 241.
   
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International Journal of Modern Physics B [Cosmology and Nuclear Physics], March 2002, vol. 16, no. 6-7, pp. 1091-1095(5)

Zheng W.T.[1]; Wang X.[1]; Ding T.[1]; Li X.T.[1]; Fei W.D.[2]; Sakamoto Y.[3]; Kainuma K.[3]; Watanabe H.[3]; Takaya M.[3]

[1]Department of Materials Science, Jilin University, Changchun 130023, P. R. China [2]Department of Materials Science and Engineering, Haerbin Institute of Technology, Haerbin 15006, P. R. China [3]Department of Precision Engineering, Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino Chiba 275-0016, Japan

Abstract:
The carbon nitride films were deposited on single crystalline Si(001) and polycrystalline diamond substrates using microwave plasma chemical vapor deposition (MPCVD) with CH4+N2 as well as CH4+NH3 mixtures as the reactive gas source, respectively. Different CH4/N2 and CH4/NH3 gas ratios were tested. The results showed that carbon nitride films with different nitrogen content could more readily be obtained using a mixture of CH4/N2 rather than CH4/NH3. The films grown by different CH4/N2 ratios showed different morphology, which was revealed by scanning electron microscopy (SEM). The crystalline carbon nitride films containing silicon were realized using a CH4:N2 = 1:100 ratio. X-ray photoelectron spectroscopy (XPS), Auger electron microscopy (AES), Raman spectroscopy, and X-ray diffraction were used to characterize the composition and chemical bonding of the deposited films.

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Surface and Coatings Technology, 22 October 2002, vol. 160, no. 2, pp. 165-172(8)

Fu Y.[1]; Sun C.Q.; Du H.; Yan B.

[1]School of MPE, Nanyang Technological University, 639798, Singapore, Singapore

Abstract:
Microwave plasma enhanced chemical vapor deposition (MW-PECVD) is considered as one of the most successful growth techniques in recent diamond and crystalline carbon nitride investigations. In this study, we tried to synthesize crystalline carbon nitride film using MW-PECVD by gradually increasing the content of nitrogen into H2/CH4 gas mixture. Well-faceted crystalline diamond films could be synthesized with a H2/CH4 gas ratio of 198:2. With the gradual increase of nitrogen content up to 3% in the gas mixture diamond film quality deteriorates seriously, and the morphological crystal size and growth rate of diamond coatings decreased significantly. With the nitrogen gas content increased to approximately 6-22%, a lot of separated round diamond or diamond-like carbon particles formed on the surface rather than a continuous film. Only with the nitrogen content increased above 72%, could some tiny crystals with a type of hexagonal facet form on the silicon surface, together with many large, round diamond particles. With the further increase of nitrogen gas content above 90%, many large, well-faceted hexagonal crystals formed on Si surface. However, XRD, energy dispersive X-ray spectrometry, X-ray photoelectron spectroscopy and nano-indentation analysis indicated that these crystals were actually silicon carbonitride (Si-C-N) with a crystalline structure of Si3N4 modified with the introduction of carbon atoms, rather than carbonitride as expected and regarded.

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Hamada, T; Saito, Y; Sekine, K; Aharoni, H; Ohmi, T, Low Temperature Gate Oxidation MOS Transistor Produced by Kr/O₂ Microwave Excited High-Density Plasma, Solid State Devices and Materials, 2000, vol. , issue , pp. 184-185.

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Applied Surface Science, 30 June 2003, vol. 216, no. 1, pp. 239-245(7)

Takahashi I.[1]; Sakurai H.; Yamada A.; Funaiwa K.; Hirai K.; Urabe S.; Goto T.; Hirayama M.; Teramoto A.; Sugawa S.; Ohmi T.

[1]Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 05 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Miyagi, Japan

Abstract:
A low dielectric constant ferroelectric Sr2(Ta1-x,Nbx)2O7 (STN) film formation technology which is applied to floating gate type ferroelectric random access memory (FFRAM) has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma PVD and an oxygen radical treatment using microwave-excited (2.45GHz) high-density (>1012cm-3) low electron temperature (<1eV) Kr/O2 plasma. Oxygen radical treatment can effectively oxidize ferroelectric film at 400oC.

Keywords: Sr2(Ta1-x,Nbx)2O7 (STN); Oxygen radical treatment; Low temperature treatment; Oxidizing ferroelectric effectively; Kr/O2 plasma

Language: English Document Type: Research article ISSN: 0169-4332

SICI (online): 0169-43322161239245

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Current Applied Physics, October 2002, vol. 2, no. 5, pp. 407-409(3)

Kang E.K.; Jang H.K.; Lee S.K.; Park E.R.; Lee C.E.[1]; Kim K.M.; Noh S.J.; Yeom S.-J.

[1]Department of Physics, Korea University, 136-701, Seoul, South Korea

Abstract:
Ferroelectric thin films of sol-gel-derived Pb(Zrx, Ti1-x)O3 (lead-zirconate-titanate, PZT) were obtained by the low-temperature processing employing oxygen-plasma treatment. The as-coated PZT films were annealed in oxygen ambience at 450 oC, followed by oxygen-plasma treatment at 200 oC, which gave rise to the ferroelectric hysteresis. Annealing of the as-coated PZT films followed by oxygen-plasma teratment at 200 oC gave rise to the ferroelectric hysteresis.

Keywords: [Physical Astronomy Classification Scheme] 77.80.-; [Physical Astronomy Classification Scheme] 81.65.-; [Physical Astronomy Classification Scheme] 52.77.-; [Physical Astronomy Classification Scheme] 81.10.J; Low-temperature processing; PZT; Thin films; Oxygen-plasma treatment

Language: English Document Type: Research article ISSN: 1567-1739
DOI (article): 10.1016/S1567-1739(02)00150-5
SICI (online): 1567-173925407409

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Integrated Ferroelectrics, 1 January 2002, vol. 46, no. 1, pp. 275-284(10)

Lee W-J.[1]; Shin W-C.[2]; Chae B-G.[2]; Ryu S-O.[2]; You I-K.[2]; Cho S.M.[2]; Yu B-G.[2]; Shin B-C.[1]

[1] Research Center for Electronic Ceramics, Dept. of Advanced Materials Eng. Dong-Eui University Busan, Korea [2] Basic Research Lab., ETRI, 161 Kajong-dong, Yusong-gu, Daejon, 305-600

Abstract:
High dielectric SrTa2O6 films and ferroelectric SBT films were prepared by alternating supply of sources and O2 plasma for PEALD process. It was observed that the uniform and conformal thin films were successfully deposited using PEALD. The dielectric constants and the dissipation factors of Pt/STO/Pt structures showed slight increase up to 700°C and a considerable increase in STO annealed at 800°C. The leakage current density of a 40nm-STO film was about 5×10-8A/cm2 at 3V. The STO MOS capacitors shows a good interface states with efficiently low fixed charge and interface trapped charge. These electrical properties support the possibility of STO oxide application to a new high-k gate dielectric. PEALD-SBT films annealed at 750°C in O2 showed typical ferroelectric property. The remanent polarization (Pr) of a 100nm-SBT film is about 4 C/cm2 at 5V-sweep voltage and the fatigue-free property after 1×1011 cycles was observed.

Keywords: STO; ferroelectrics; SBT; plasma enhanced atomic layer deposition

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Journal of Electroceramics, August 2000, vol. 5, no. 1, pp. 7-20(14)

Tirumala S.[1]; Rastogi A.C.[1]; Desu S.B.[1]

[1]Materials Science and Engineering Department, Virginia Polytechnic Institute and State University 213, Holden Hall, Blacksburg, VA 24061-0237

Abstract:
Growth of \hbox_\hbox_\hbox_ (SBT) thin films has been carried out in the presence of \hbox_-plasma created by applying a potential at an auxiliary ring electrode placed near the substrate. Effect of plasma excitation potential and polarity, especially negative polarity, on the formation of a proper SBT phase at 700°C and in modifying crystallite orientation and microstructure of SBT films over (1 1 1) oriented Pt film coated over \hbox_/\hbox_/\hbox substrates has been demonstrated. Preferred c-axis orientation of SBT films changes to (a–b) orientation with decrease in plasma excitation potential from -700 to -350 V and eliminates secondary \hbox_\hbox phase formation even at 600°C Microstructural study show a 2-dimensional large flat c-oriented crystallites formed at -700 V change to small crystallites in conformity with the changed aspect ratio for crystallites in (a–b) plane parallel to film plane. Spectroscopic ellipsometric results are in agreement with the microstructural data. These affects are attributed to \hbox_-ion bombardment during film growth which reduces nucleation barrier for growth of crystallites in (a–b) plane. \hbox_-plasma sustains the cationic species formed by laser ablation, which along with \hbox_^ ions, provide necessary activation energy and enhance the oxidation rates required for SBT phase formation even at 700°C. SBT films grown in \hbox_-plasma show enhancement in remnant polarization value from 1.2 to 6.6 C/cm^2 and display ferroelectric properties superior to those formed without plasma. Further \hbox_-plasma eliminates post deposition annealing step for observance of enhanced polarization values. This study shows \hbox_-plasma excitation potential could be exploited as a new process parameter in laser ablation growth of ferroelectric oxide thin films.

Keywords: SBT; plasma; ferroelectric

Language: English Document Type: Regular paper ISSN: 1385-3449
SICI (online): 1385-344951720

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Thin Solid Films, 28 February 1997, vol. 295, no. 1, pp. 299-304(6)

Chung S.-W.[1]; Chung S.-O.; No K.; Lee W.-J.

[1]Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon 305-701, South Korea

Abstract:
The electron cyclotron resonance plasma-enhanced chemical vapor deposition method is used to prepare ferroelectric PbTiO3 films. Single-phase perovskite PbTiO3 films are successfully fabricated on Pt/Ti/SiO2/Si and Pt/SiO2/Si substrates at temperatures of 390-530oC using metal-organic (MO) sources. When the deposition temperature is sufficiently high (above 500oC), lead titanate film has a stoichiometric composition independently of the MO source supply ratio. Whereas the deposition temperature is low (below 450oC), the composition and, in turn, the structure are depended on the source supply ratio. With adequate MO source ratio, stoichiometric perovskite PbTiO3 film can be obtained at a temperature as low as 390oC. The variations of preferred orientation, degree of c-axis orientation and film morphology with process temperature, MO source supply ratio and substrate are also examined.

Keywords: Plasma processing and deposition; Chemical vapor deposition; Crystallization; X-ray diffraction

Language: English Document Type: Research article ISSN: 0040-6090
DOI (article): 10.1016/S0040-6090(96)09272-3
SICI (online): 0040-60902951299304

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Materials Chemistry and Physics, August 1996, vol. 45, no. 2, pp. 155-158(4)

Kim S.T.[1]; Kim J.W.; Jung S.W.; Shin J.S.; Lee W.J.; Ahn S.T.

[1]Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, South Korea

Abstract:
Ferroelectric Pb(Zr,Ti)O3 thin films were successfully fabricated on Pt-coated Si substrates by the electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) method using metal-organic (MO) sources. Perovskite structures with well-developed crystalline grains are obtained at a substrate temperature of 500oC. These PZT films, with thicknesses of about 1000 a, show high charge storage densities (Pmax-Pr = 10-15 C cm- for 1.5 V operation) and low leakage current densities (~ 10-6 A cm-2 at 1.5 V). The effects of the Zr/Ti concentration ratio in the film and the rapid thermal annealing on the electrical properties of the films were also studied.

Keywords: PZT thin films; Electrical properties; Ferroelectric thin films

Language: English Document Type: Research article ISSN: 0254-0584
DOI (article): 10.1016/0254-0584(96)80094-0

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Microelectronic Engineering, December 1995, vol. 29, no. 1, pp. 45-48(4)

Mace H.; Achard H.; Peccoud L.

Abstract:
One of the key processing issues involved in the integration of Pt/PZT/Pt ferroelectric capacitors on silicon-based integrated circuits is dry etching of the ceramic film and associated electrodes. In this work, using a high density DECR plasma and in a CF42 or CF2Cl2 chemistries, we have evaluated the effects of temperature, microwave and RF power on Pt and PZT etch rates. As each component of the PZT film can be expected to form compounds with differents volatilities, we mainly focused our work on the use of a mass spectrometry technique to monitor, in different fluorine, chlorine and bromine chemistries, the volatile species generated during dry etching.

Language: English Document Type: Research article ISSN: 0167-9317
DOI (article): 10.1016/0167-9317(95)00113-1

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Thin Solid Films, 28 May 1997, vol. 300, no. 1, pp. 6-10(5)

Chiba T.[1]; Itoh K.-I.; Matsumoto O.

[1]Department of Chemistry, Aoyama Gakuin University, Chitosedai, Setagaya-ku, Tokyo 157, Japan

Abstract:
Barium titanium trioxide (BaTiO3) thin films were deposited on fused silica or silicon wafer substrate from barium dipivaloylmethanate (II) (Ba(dpm)2) and titanium tetraisopropoxide (IV) (TTIP) used as precursors in an oxygen microwave plasma. The substrates were dielectrically heated and the substrate temperatures were around 900 K during the film deposition. The deposition was performed for 15 min and the deposits were identified as BaTiO3 by means of X-ray diffraction, X-ray photoelectron spectroscopy, infrared spectroscopy, and ellipsometry. Oxygen and barium atoms and TiO and CO molecules were identified in the plasma. These species would produce higher deposition rates at lower substrate temperatures than those did in the usual thermal metalorganic chemical vapor deposition (MOCVD). The dielectric constant of the BaTiO3 thin film that was directly deposited on the silicon wafer substrate was as low as 101 order of magnitude. Because the deposit reacted with the substrate and an interdiffusional layer was formed, the platinum layer was coated on the silicon wafer substrate in order to prevent the formation of an interdiffusional layer. The dielectric constant then increased to 103 order of magnitude.

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Catalysis Today, 15 March 2002, vol. 72, no. 3, pp. 267-279(13)

Karches M.; Morstein M.; Rudolf von Rohr P.; Pozzo R.L.; Giombi J.L.; Baltanas M.A.[1]

[1]INTEC Instituto de Desarrollo Tecnologico para la Industria Qumica), Guemes 3450, S3000GLN , Santa Fe, Argentina

Abstract:
Amorphous TiO2 films were deposited on glass microbeads using a specially designed circulating fluidized bed plasma-CVD reactor. The film thickness was varied between 7 and 120nm. While only little carbon impurity was found, XPS analysis revealed the presence of silicon, sodium and alkaline earth elements in the titania coating. Reduced amounts of these substrate-originating impurities were observed in the thicker films. By ToF-SIMS imaging, cross-sectional TEM and time-resolved dissolution, the titania coatings were proven to be uniform, both per particle and in terms of the film thickness distribution.The photocatalytic performance of the composite particles was evaluated in a fully irradiated fluidized-bed photoreactor. The thinnest films had some photocatalytic activity in the as-deposited state, possibly induced by the high specific power of the microwave plasma or silicon doping. The thicker films needed a post-deposition calcination at 723K to achieve catalytic activity. Both the degree of anatase crystallization and the activity were improved by applying thicker films and after UV irradiation-plus-calcining. All films showed good adhesion and abrasion resistance during the photocatalytic tests. The best plasma-CVD films were about 70% as efficient (per unit reactor volume) as the reference material, P-25 immobilized on quartz sand.

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Applied Surface Science, 15 April 2003, vol. 210, no. 3, pp. 249-254(6)

Dalapati G.K.; Chatterjee S.; Samanta S.K.; Maiti C.K.[1]

[1]Department of Electronics & ECE, IIT Kharagpur, 721302, Kharagpur, India

Abstract:
Thin films of titanium dioxide have been deposited on strained Si0.82Ge0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C3H7)4] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density (Dit), fixed oxide charge density (Qf/q) and flat-band voltage (VFB) of as-deposited films were found to be 13.2, 40.6Å, 6x1011eV-1cm-2, 3.1x1011cm-2 and -1.4V, respectively. The capacitance-voltage (C-V), current-voltage (I-V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications.

Keywords: Electrical characterization; Low temperature deposition; TiO₂ films; High-K

Language: English Document Type: Research article ISSN: 0169-4332
DOI (article): 10.1016/S0169-4332(03)00149-1
SICI (online): 0169-43322103249254

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Materials Letters, November 2000, vol. 46, no. 2, pp. 60-64(5)

Tong M.; Dai G.[1]; Gao D.

[1]Department of Electronic Engineering, Jilin University, 130023, Changchun, People's Republic of China

Abstract:
Functional ceramic PbTiO₃ thin films have been prepared onto Si substrates by plasma-enhanced chemical vapor deposition (PECVD) technique at the substrate temperature of 170oC. Lead tetraethyl [Pb(C2H5)4], titanium tetrachloride (TiCl4), and oxygen (O2) were used as precursors. The composition, structure and morphology of the thin films were investigated by means of X-ray fluorescence spectroscopy (X-FS), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) methods.

Keywords: PbTiO₃; Perovskites; PECVD technique; Thin films

Language: English Document Type: Short communication ISSN: 0167-577X
DOI (article): 10.1016/S0167-577X(00)00143-9
SICI (online): 0167-577X4626064

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Thin Solid Films, 15 July 1997, vol. 303, no. 1, pp. 17-26(10)

Francke E.; Morvan D.; Amouroux J.[1]; Avni R.; Nickel H.; Miralai S.F.

[1]ENSCP, Laboratoire de Genie des Procedes Plasmas, 11 rue Pierre et Marie Curie, F-75231 Paris, France

Abstract:
A new low-pressure plasma coating process was developed using an inductively coupled radio-frequency plasma, expanded through a nozzle (PETN) and aqueous metallic salt injection in a pulsating mode, LaMnO_3.15 perovskites were deposited on quartz and YSZ substrates, in an Ar + O₂ plasma using La(NO₃)₃ and Mn(NO₃)₂ aqueous precursors. The microcrystalline structure of the deposits was investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM)-XRD. The aerosol passing the r.f. Ar + O₂ plasma produces a shock wave prior to the nozzle, evaporating the excess H₂O and decomposing the water and nitrate compounds. The molecular spectra of LaO, MnO and OH show that the high reactive plasma medium combined with a shock wave, accelerate the dissociation oxidation kinetics. These results were confirmed by quadrupole mass spectrometry measurements. Laser doppler anemometry measurements also showed a regular and reproducible pulsed injection.

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Kim, HS; Park, YJ; Baik, YJ, Beta-SiC Thin film growth using microwave plasma activated CH 4-SiH 4 sources, Thin Solid Films, 1999, vol. 341, issue 1/2, pp. 42.

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1. Anton, R; Wiegner, T; Bradley, C, Design and performance of a versatile, cost-effective microwave electron cyclotron resonance plasma source for surface and thin film processing, Review of Scientific Instruments, 2000, vol. 71, issue 2p2, pp. 1177.
2. Volz, K; Ensinger, W; Stritzker, B, Formation of silicon carbide and nitride by ECR microwave plasma immersion ion implantation, Nuclear instruments & methods in physics researc, 1998, vol. 141, issue 1/4, pp. 663.
3. Volz, K; Ensinger, W; Stritzker, B, Formation of silicon carbide and amorphous carbon films by pulse biasing silicon to a high voltage in a methane electron cyclotron resonance microwave plasma, Journal of materials research, 1998, vol. 13, issue 7, pp. 1765.
   
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Materials Science and Engineering: A, 15 January 1999, vol. 259, no. 1, pp. 120-125(6)

Ramakrishnan K.N.[1]

[1]Materials Development Division, IGCAR, Kalpakkam, 603 102, India

Abstract:
In this investigation, titania and zirconia ceramic powders were synthesised from titanium isopropoxide and zirconyl nitrate in methanol respectively by exposure to microwave radiation. The powder size distribution data determined using laser particle sizer followed two-parameter Weibull distribution function. The mean particle size determined from the distribution function showed a linear relationship with increase in applied microwave power.

Keywords: Powder; Particle size; Microwave synthesised; Ceramic powders

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Thin Solid Films, 31 May 2002, vol. 411, no. 2, pp. 185-191(7)

Peiro A.M.; Vigil E.; Peral J.; Domingo C.; Domenech X.; Ayllon J.A.[1]

[1]Departament de Qumica, Universitat Autonoma de Barcelona, 08193 , Bellaterra, Spain

Abstract:
TiO2 films were deposited on either glass or Si substrates by using a two-step soft-solution method. A submonolayer of anatase TiO2 nanocrystals was first deposited on the substrate by a drain-coating process that was performed at 333 K from an aqueous TiO2 colloidal solution. The substrate partially covered with the TiO2 nanocrystals was immersed in an aqueous solution, containing a titania precursor [fluorine-complexed Ti(IV)], and the whole was treated with microwave irradiation. The nanocrystals deposited on the substrate acted as growth seeds in the subsequent formation of the TiO2 film. The obtained TiO2 films showed a high degree of crystallinity (anatase), even without further thermal treatment; however, they did not show photocatalytic activity. Thickness of the films was varied as a function of microwave power and irradiation time.

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